115370-0003, Microcircuit Memory With NSN 5962-01-078-1814 by Manufacturer Thales Usa Inc - Request a Quote

Mfg Part Number: 115370-0003	Alternate P/N: 1153700003	Manufacturer: Thales Usa Inc
NSN : 5962-01-078-1814	Item Name : microcircuit memory	CAGE Code : 65597
FSC : 5962 Microcircuits Electronic

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Operating as an AS9120B, ISO 9001:2015, and FAA AC-56B accredited enterprise, Distribution 3Sixty adheres to strict quality control measures and rigorous industry standards. As such, we are the only independent distributor with a NO CHINA SOURCING pledge; this ensures that all products on our website can be purchased with confidence. Each part from us is delivered with its qualifying certifications or manufacturer trace documentation, and many items are subjected to rigorous quality assurance testing, inspection, and cross referencing before shipment. If you are ready to source products with the NSN 5962-01-078-1814, or other items from the CAGE Code 65597 belonging to Thales Usa Inc, get in touch with a rep today and experience the quality of Distribution 3Sixty. NSN part 115370-0003 is in stock and ready to ship.

NSN Information for Part Number 115370-0003 with NSN 5962-01-078-1814, 5962010781814

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-078-1814 Item Description: Microcircuit Memory	5962	010781814	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
115370-0003	2	1	C			A

Characteristics Data of NSN 5962-01-078-1814, 5962010781814

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 750 INCHES MINIMUM AND 0 795 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 120 INCHES MINIMUM AND 0 195 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING512 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND 3-STATE OUTPUT AND WDECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND WENABLE AND WDISABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN6 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATOR-0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT26916-058-002131 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 FLAT LEADS

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