Mfg Part Number: K6T1008C2EDB7000 | Manufacturer: Samsung Semiconductor Inc | NSN : 5962-01-408-2869 |
Item Name : microcircuit memory | CAGE Code : 0DUN9 | FSC : 5962 Microcircuits Electronic |
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-408-2869 Item Description: Microcircuit Memory | 5962 | 014082869 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
K6t1008c2edb7000 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10) |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
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